SWITCHING EFFECT IN COMPOUNDS InGaSe2 AND InGaTe2
DOI:
https://doi.org/10.61413/DFLI7837Keywords:
memory switching effect, negative resistance, injected carriers, InGaSe2, InGaTe2 compoundsAbstract
The presented work presents the results of studying the current-voltage characteristics of ternary compounds of the type, crystallizing in the tetragonal syngony, at various temperatures in a static mode. It was found that the compounds InGaSe2, InGaTe2 have switching properties with memory. With increasing temperature, the threshold voltage decreases and the most pronounced S-shaped characteristics are observed at low temperatures. It is shown that an obligatory condition for the appearance of negative resistance in the investigated phases is the existence of an additional mechanism of increase in the conductivity of the base region that accompanies injection. During injection, physical processes occur that lead either to an increase in the penetration depth of injected carriers, or to an additional increase in their concentration at each point, or to an increase in the proportion of injected carriers in the total p-n junction current. It was found that at low voltages across the diode, the base resistance is high and almost all of the applied voltage drops across it. As the voltage increases, the concentration of injected carriers in the base increases and its resistance decreases. Therefore, as the current increases, the total voltage increases. The current is a monotonic function of the applied voltage. This leads to a decrease in the share of the voltage drop at the base, which leads to amplification and a new redistribution of voltage between the base and the p-n junction. This is the positive feedback necessary for the appearance of negative resistance. Thus, in ternary semiconductors of the type, the obligatory conditions for the appearance of negative resistance are the existence of an additional mechanism of an increase in the conductivity of the base region that accompanies injection.
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